A high efficiency 10 watt HBT power amplifier assembly using combining techniques

Author

Ferrell, G. ; Dickens, Luke ; Gipprich, J. ; Hayes, Barry ; Sacks, F.

Author_Institution

Westinghouse Electr. Corp., Baltimore, MD, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

327

Abstract

Six 2 Watt AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) MMIC amplifiers have been combined using low loss, low temperature cofired ceramic (LTCC) splitting and combining networks. The six MMIC amplifiers were combined in a compact, testable, and producible assembly. The amplifier assembly produced 10 Watts peak output power and 30% peak power added efficiency (PAE) over an 8.0 to 14.0 GHz bandwidth. This wideband power amplifier has applications in solid state transmitters and transmit/receive (T/R) modules that require high gain, high power, high efficiency, and compact size.<>

Keywords

III-V semiconductors; MMIC; MMIC power amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; wideband amplifiers; 10 W; 30 percent; 8.0 to 14.0 GHz; AlGaAs-GaAs; HBT power amplifier assembly; MMIC amplifiers; combining techniques; low temperature cofired ceramic; peak output power; peak power added efficiency; solid state transmitters; splitting networks; transmit/receive modules; wideband power amplifier; Assembly; Broadband amplifiers; Ceramics; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405977

Filename

405977