DocumentCode
3200623
Title
Low-cost high-efficient 10-Watt X-band high-power amplifier
Author
van der Bent, G. ; de Hek, A.P. ; Bessemoulin, A. ; Van Vliet, Frank E.
Author_Institution
TNO Defence, Security & Safety, The Hague, Netherlands
fYear
2009
fDate
9-11 Nov. 2009
Firstpage
1
Lastpage
6
Abstract
A high power X-band amplifier with an output power over 10 Watts and a Power Added Efficiency (PAE) in excess of 40 percent has been developed. The design was fabricated in a 0.25 ¿m pHEMT GaAs process (WIN Semiconductor PP25-01). The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of a high performance X-band T/R chipset.
Keywords
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; gallium arsenide; GaAs; WIN Semiconductor PP25-01; X-band T/R chipset; high-electron mobility transistor; low-cost high-efficient X-band high-power amplifier; pHEMT GaAs process; power 10 W; power added efficiency; size 0.25 mum; size 6 inch; wafer technology; Costs; Gallium arsenide; High power amplifiers; PHEMTs; Phased arrays; Power amplifiers; Power generation; Production; Road safety; Voltage; MMIC power Amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location
Tel Aviv
Print_ISBN
978-1-4244-3985-0
Type
conf
DOI
10.1109/COMCAS.2009.5386072
Filename
5386072
Link To Document