Title :
A New Approach to Prevent the Negative Impact of the Metastable Defect in Boron Doped CZ Silicon Solar Cells
Author :
Herguth, Axel ; Schubert, Gunnar ; Kaes, Martin ; Hahn, Giso
Author_Institution :
Dept. of Phys., Konstanz Univ.
Abstract :
A new reaction model concerning the boron-oxygen related degradation is presented, introducing a third recombination inactive state, that stabilizes the electrical parameters of Cz-Si solar cells, and the transition to this new inactive state is proven by experimental data. Furthermore, the stability under solar cell working conditions and the formation kinetics of this additional state are discussed
Keywords :
boron; elemental semiconductors; oxygen; semiconductor device models; silicon; solar cells; Si:B,O; boron doped CZ silicon solar cells; boron-oxygen related degradation; electrical parameters; formation kinetics; inactive state transition; metastable defect; negative impact; reaction model; third recombination inactive state; Annealing; Boron; Degradation; Frequency; Kinetic theory; Metastasis; Photovoltaic cells; Silicon; Temperature; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279611
