Control of plasma and surface conditions for low defect density a-Si:H at high growth rates

Author

Matsuda, Akihisa

Author_Institution

Electrotech. Lab., Tsukuba, Japan

fYear

1996

fDate

13-17 May 1996

Firstpage

1029

Lastpage

1034

Abstract

The important processes in the radio frequency plasma enhanced decomposition of silane for preparation of hydrogenated amorphous silicon (a-Si:H) are discussed. The conditions necessary for obtaining low defect density material is discussed in terms of the gas phase species and their surface reactions. The problems occurring when attempting to increase the growth rate are discussed from the viewpoint of plasma chemistry and its effect on the surface reactions. Thereby, conditions necessary for obtaining low defect density material at high growth rates are identified

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; surface chemistry; surface topography; Si:H; a-Si:H; high growth rates; low defect density; plasma chemistry; radio frequency plasma enhanced decomposition; silane; surface conditions; surface reactions; Electrons; Kinetic theory; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Plasma temperature; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564306

Filename

564306