Study of buffer layer design in single junction solar cells

Author

Zhu, Hong ; Fonash, Stephen J.

Author_Institution

Electron. Mater. Process & Res. Lab., Pennsylvania State Univ., University Park, PA, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

1097

Lastpage

1100

Abstract

Two different approaches to reduce the influence of the solar cell interface have been explored using the authors´ AMPS (Analysis of Microelectronics and Photonic Structures) computer program. The two particular approaches they considered both focus on shaping the field at the p layer/absorber interface between a-SiC:H and a-Si:H to enhance p-i-n solar cell performance and in both cases they assume this can be done without introducing any new defects at the interface. The two approaches examined are: (1) the bandgap grading buffer layer; and (2) the doped buffer layer

Keywords

amorphous semiconductors; electronic engineering computing; elemental semiconductors; energy gap; hydrogen; semiconductor device models; semiconductor doping; silicon; software packages; solar cells; AMPS software; a-Si:H p-i-n solar cells; bandgap grading buffer layer; buffer layer design; computer simulation; doped buffer layer; p layer/absorber interface; single-junction solar cells; Buffer layers; Computer interfaces; Lighting; Materials processing; Microelectronics; Numerical models; Optical computing; PIN photodiodes; Photonic band gap; Photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564322

Filename

564322