DocumentCode :
3201127
Title :
Study of buffer layer design in single junction solar cells
Author :
Zhu, Hong ; Fonash, Stephen J.
Author_Institution :
Electron. Mater. Process & Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
1097
Lastpage :
1100
Abstract :
Two different approaches to reduce the influence of the solar cell interface have been explored using the authors´ AMPS (Analysis of Microelectronics and Photonic Structures) computer program. The two particular approaches they considered both focus on shaping the field at the p layer/absorber interface between a-SiC:H and a-Si:H to enhance p-i-n solar cell performance and in both cases they assume this can be done without introducing any new defects at the interface. The two approaches examined are: (1) the bandgap grading buffer layer; and (2) the doped buffer layer
Keywords :
amorphous semiconductors; electronic engineering computing; elemental semiconductors; energy gap; hydrogen; semiconductor device models; semiconductor doping; silicon; software packages; solar cells; AMPS software; a-Si:H p-i-n solar cells; bandgap grading buffer layer; buffer layer design; computer simulation; doped buffer layer; p layer/absorber interface; single-junction solar cells; Buffer layers; Computer interfaces; Lighting; Materials processing; Microelectronics; Numerical models; Optical computing; PIN photodiodes; Photonic band gap; Photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564322
Filename :
564322
Link To Document :
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