• DocumentCode
    3201187
  • Title

    Field collapse due to band-tail charge in amorphous silicon solar cells

  • Author

    Wang, Qi ; Crandall, Richard S. ; Schiff, Eric A.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    1113
  • Lastpage
    1116
  • Abstract
    It is common for the fill factor (FF) to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light charges much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This charge screens the applied field, reducing the internal field. Owing to its lower drift mobility, the space charge due to holes exceeds that due to electrons and is the main cause of the field screening. The space charge in midgap states is small compared with that in the tails and can be ignored under normal solar-cell operating conditions. Experimentally, they measured the photocapacitance as a means to probe the collapsed field. They also explored the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity
  • Keywords
    amorphous semiconductors; electronic engineering computing; elemental semiconductors; hydrogen; semiconductor device models; semiconductor doping; silicon; software packages; solar cells; space charge; AMPS simulation software; Si:H; amorphous silicon solar cells; band-tail charge; deep defect states; drift mobility; field collapse; fill factor; operating conditions; photocapacitance; semiconductor; space charge trapping; Amorphous silicon; Analytical models; Charge carrier processes; Electron mobility; Electron traps; Lighting; Microelectronics; Photovoltaic cells; Space charge; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564326
  • Filename
    564326