DocumentCode
3201187
Title
Field collapse due to band-tail charge in amorphous silicon solar cells
Author
Wang, Qi ; Crandall, Richard S. ; Schiff, Eric A.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
1996
fDate
13-17 May 1996
Firstpage
1113
Lastpage
1116
Abstract
It is common for the fill factor (FF) to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light charges much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This charge screens the applied field, reducing the internal field. Owing to its lower drift mobility, the space charge due to holes exceeds that due to electrons and is the main cause of the field screening. The space charge in midgap states is small compared with that in the tails and can be ignored under normal solar-cell operating conditions. Experimentally, they measured the photocapacitance as a means to probe the collapsed field. They also explored the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity
Keywords
amorphous semiconductors; electronic engineering computing; elemental semiconductors; hydrogen; semiconductor device models; semiconductor doping; silicon; software packages; solar cells; space charge; AMPS simulation software; Si:H; amorphous silicon solar cells; band-tail charge; deep defect states; drift mobility; field collapse; fill factor; operating conditions; photocapacitance; semiconductor; space charge trapping; Amorphous silicon; Analytical models; Charge carrier processes; Electron mobility; Electron traps; Lighting; Microelectronics; Photovoltaic cells; Space charge; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564326
Filename
564326
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