Title :
Development of p-type microcrystalline silicon-carbon alloy thin film at low power and its application in tunnel junctions [solar cells]
Author :
Ray, Swati ; Desgupta, A. ; Barua, A.K.
Author_Institution :
Energy Res. Unit, Indian Assoc. for the Cultivation of Sci., Calcutta, India
Abstract :
Wide band gap anti-highly conducting p-type microcrystalline silicon carbide (μc-SiC:H) thin films have been prepared at low power (39 mW/cm2) by a conventional RF-PECVD technique. The dark conductivity of the films varies from 8-0.11 S cm-1 whereas the E04 value varies from 1.95-2.35 eV, for different carbon incorporations. These films have been applied in an incomplete double junction solar cell structure, viz. glass/TCO/p/i/n+/p+ /Al to study the tunneling effect
Keywords :
dark conductivity; energy gap; hydrogen; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; silicon compounds; solar cells; tunnelling; μc-SiC:H thin film solar cells; 1.95 to 2.35 eV; 8 to 0.11 S/cm; RF-PECVD technique; SiC:H; carbon incorporations; dark conductivity; double junction solar cell structure; tunneling effect; Artificial intelligence; Glass; Optical films; Photovoltaic cells; Semiconductor thin films; Silicon alloys; Silicon carbide; Transistors; Tunneling; Wideband;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564328
