Au/Ti/Al contacts to SiC for power applications: electrical, chemical and thermal properties

Author

Kolaklieva, L. ; Kakanakov, R. ; Lepoeva, G. ; Gomes, Joao Bartolo ; Marinova, Ts

Author_Institution

Inst. of Appl. Phys., Bulgarian Acad. of Sci., Plovdiv, Bulgaria

Volume

2

fYear

2004

fDate

16-19 May 2004

Firstpage

421

Abstract

A new Au/Ti(70%)/Al(30%) composition has been proposed and investigated as an ohmic contact to p-type SiC. The dependence of the resistivity on the annealing conditions has been studied at temperatures ranging from 700 °C to 950 °C. The lowest contact resistivity of 1.40 × 10^-5 Ω.cm² is achieved after annealing at 900 °C. The study of the thermal properties determines the contact stability during the ageing at temperatures of 500-700 °C, operating temperatures up to 450 °C and current densities of 10³ A/cm². XPS depth analysis of annealed and aged contacts has been performed to understand the origin of the ohmic properties and the thermal and power stability observed.

Keywords

X-ray photoelectron spectra; aluminium; annealing; contact resistance; current density; electrical resistivity; gold; ohmic contacts; silicon compounds; thermal stability; titanium; wide band gap semiconductors; 450 degC; 500 to 700 degC; 700 to 950 degC; Au-Ti-Al; Au/Ti/Al contacts; SiC; XPS depth analysis; chemical properties; electrical properties; ohmic contact; power applications; resistivity; thermal properties; Aging; Annealing; Chemicals; Conductivity; Gold; Ohmic contacts; Silicon carbide; Temperature dependence; Temperature distribution; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314851

Filename

1314851