Title :
Investigation of metal-silicon interface influenced by vacuum photothermal processing (VPP)
Author :
Golan, G. ; Chorny, A. ; Kranovich, L. ; Axelevitch, A.
Author_Institution :
Dept. of Electricity & Electron. Eng., Holon Acad. Inst. of Technol., Israel
Abstract :
Vacuum Photothermal Processing (VPP) constitutes a simultaneous irradiation of a treated sample in a vacuum chamber with electron flux and non-coherent light, mainly UV and VUV spectrum. In the present work we have studied the influence of VPP on the interface between a silicon substrate and a metal coating deposited on this substrate. It was found that the VPP provides for stabilizing the deposited coatings, improves homogeneity, and cures irreversible electrical breakdown in thin-film systems; it was also found to improve the roughness of interfaces between semiconductor and metal coatings. All of these modifications and improvements are explained by the appearance of an intermediate layer which was born up while VPP, passivating the interface. This built-in layer, is presented in our study.
Keywords :
elemental semiconductors; interface roughness; photothermal effects; rapid thermal processing; semiconductor-metal boundaries; silicon; UV spectrum; VUV spectrum; cures irreversible electrical breakdown; deposited coatings; electron flux; homogeneity; interface roughness; metal-silicon interface; noncoherent light; simultaneous-irradiation; thin-film systems; vacuum chamber; vacuum photothermal processing; Coatings; Electric breakdown; Electrodes; Electron beams; Rapid thermal processing; Semiconductor device breakdown; Silicon; Substrates; Tungsten; Voltage control;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314852
