DocumentCode
3201972
Title
Investigation of metal-silicon interface influenced by vacuum photothermal processing (VPP)
Author
Golan, G. ; Chorny, A. ; Kranovich, L. ; Axelevitch, A.
Author_Institution
Dept. of Electricity & Electron. Eng., Holon Acad. Inst. of Technol., Israel
Volume
2
fYear
2004
fDate
16-19 May 2004
Firstpage
425
Abstract
Vacuum Photothermal Processing (VPP) constitutes a simultaneous irradiation of a treated sample in a vacuum chamber with electron flux and non-coherent light, mainly UV and VUV spectrum. In the present work we have studied the influence of VPP on the interface between a silicon substrate and a metal coating deposited on this substrate. It was found that the VPP provides for stabilizing the deposited coatings, improves homogeneity, and cures irreversible electrical breakdown in thin-film systems; it was also found to improve the roughness of interfaces between semiconductor and metal coatings. All of these modifications and improvements are explained by the appearance of an intermediate layer which was born up while VPP, passivating the interface. This built-in layer, is presented in our study.
Keywords
elemental semiconductors; interface roughness; photothermal effects; rapid thermal processing; semiconductor-metal boundaries; silicon; UV spectrum; VUV spectrum; cures irreversible electrical breakdown; deposited coatings; electron flux; homogeneity; interface roughness; metal-silicon interface; noncoherent light; simultaneous-irradiation; thin-film systems; vacuum chamber; vacuum photothermal processing; Coatings; Electric breakdown; Electrodes; Electron beams; Rapid thermal processing; Semiconductor device breakdown; Silicon; Substrates; Tungsten; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314852
Filename
1314852
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