Title :
Numerical modeling of silicon etching in CF4/O2 plasma-chemical system
Author :
Grigoryev, Yu.N. ; Gorobchuk, A.G.
Author_Institution :
Inst. of Computational Technol., Acad. of Sci., Novosibirsk, Russia
Abstract :
In the paper the results of numerical optimization of radial flow plasma-chemical reactor in dependence on binary gas composition CF4/O2 are presented. The mathematical model of nonisothermal reactor process with multicomponent chemical kinetics of 12 reactants such as F, F2, CF2, CF3, CF4, C2F6, O, O2, CO, CO2, COF, COF2 was used for numerical calculations. The effects of CF2, CF3 adsorption and "competition" of chemisorption of fluorine and oxygen atoms on the etching of silicon film were included in consideration. The results of optimizing computations of silicon etching rate and uniformity index in binary gas mixture CF4/O2 are presented. It was shown that the etching rate dependence on fluorine concentration with different fractions Of O2 in CF4/O2 has a hysteresis character.
Keywords :
chemisorption; elemental semiconductors; silicon; sputter etching; CF4-O2; CF4/O2 plasma-chemical system; Si; Si etching; chemisorption; etching rate; numerical modeling; numerical optimization; radial flow plasma-chemical reactor; uniformity index; Chemical processes; Chemical reactors; Etching; Inductors; Kinetic theory; Mathematical model; Numerical models; Plasma applications; Plasma chemistry; Silicon;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314866
