• DocumentCode
    3202319
  • Title

    Electrical properties of high-k Ta2O5 gate dielectrics on strained Ge-rich layers

  • Author

    Chakraborty, S. ; Samanta, S.K. ; Bhattacharya, S. ; McCarthy, J. ; Armstrong, B.M. ; Gamble, H.S. ; Dalapati, G.K. ; Das, S. ; Perova, T.S. ; Moore, R.A. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • Volume
    2
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    483
  • Abstract
    Thin films of Ta2O5 have been deposited on strained Ge-rich layers using tantalum pentaethoxide [Ta(OC2H5)5] by plasma enhanced chemical vapor deposition (PECVD) at low temperature. Electrical properties of the deposited samples have been measured using high frequency capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) techniques. The fixed oxide charge density (Qf/q) and interface state density (Dit) are found to be 1.04 × 1012 cm-2 and 3.09 × 1011 cm-2 eV-1, respectively. The leakage current is observed to be dominated by Schottky emission (SE) at low electric field. The stress induced leakage current (SILC) is found to be negligible, indicating the good reliability of the deposited thin films.
  • Keywords
    Ge-Si alloys; Schottky effect; carrier density; current density; dielectric thin films; electrical conductivity; interface states; leakage currents; plasma CVD coatings; semiconductor-insulator boundaries; tantalum compounds; Schottky emission; electrical properties; fixed oxide charge density; high frequency capacitance-voltage techniques; high frequency conductance-voltage techniques; high frequency current-voltage techniques; high-k Ta2O5 gate dielectrics; interface state density; leakage current; plasma enhanced chemical vapor deposition; strained Ge-rich layers; stress induced leakage current; tantalum pentaethoxide; Capacitance-voltage characteristics; High K dielectric materials; High-K gate dielectrics; Leakage current; Plasma chemistry; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314868
  • Filename
    1314868
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202319