DocumentCode :
3202342
Title :
Carrier lifetime in Ge+ implanted SiGe HBTs structures
Author :
Mitrovic, I.Z. ; Buiu, O. ; Hall, S. ; Ward, P.J.
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
Volume :
2
fYear :
2004
fDate :
16-19 May 2004
Firstpage :
487
Abstract :
This paper reports on carrier lifetime in Ge+ implanted Si/Si1-xGex/Si structures extracted from capacitance-transient responses of test MOS capacitors. The emphasis is put on the calculation of effective carrier lifetime in Ge+ implanted regions based on the refined value of the intrinsic carrier density/bandgap due to implanted germanium.
Keywords :
Ge-Si alloys; carrier lifetime; energy gap; germanium; heterojunction bipolar transistors; interface states; ion implantation; silicon; Ge+ implanted SiGe HBTs structures; Si/Si1-xGex/Si structures; capacitance-transient responses; carrier lifetime; Capacitance; Charge carrier lifetime; Circuit testing; Germanium silicon alloys; Heterojunction bipolar transistors; MOS capacitors; Plasma measurements; Plasma temperature; Radio frequency; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
Type :
conf
DOI :
10.1109/ICMEL.2004.1314869
Filename :
1314869
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3202342
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