DocumentCode
3202412
Title
Enhancement of light emission from silicon by a photonic crystal nanocavity and high-pressure water vapor annealing
Author
Fujita, Masayuki ; Gelloz, Bernard ; Koshida, Nobuyoshi ; Noda, Susumu
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
350
Lastpage
352
Abstract
We propose and demonstrate the application of high-pressure water vapor annealing (HWA) to silicon photonic-crystal nanocavities for surface passivation. We find that HWA boosts light emission due to the reduction of surface recombination beyond simply using the cavity effect.
Keywords
annealing; elemental semiconductors; passivation; photonic crystals; silicon; surface recombination; high-pressure water vapor annealing; light emission enhancement; photonic crystal nanocavity; silicon photonic-crystal nanocavities; surface passivation; surface recombination; Cavity resonators; Optical surface waves; Photonic crystals; Silicon; Spontaneous emission; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643328
Filename
5643328
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