DocumentCode :
3202463
Title :
MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift
Author :
Huo, Yijie ; Chen, Robert ; Lin, Hai ; Kamins, Theodore ; Harris, James S.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
344
Lastpage :
346
Abstract :
Low-temperature MBE growth of up to Ge0.926Sn0.074 alloys on lattice-matched In0.10Ga0.90As resulted in high-quality material as determined by AFM, TEM, and XRD. Samples show longer wavelength absorption-edge shifts with increasing Sn incorporation.
Keywords :
X-ray diffraction; atomic force microscopy; germanium alloys; metallic thin films; molecular beam epitaxial growth; spectral line shift; tin alloys; transmission electron microscopy; AFM; Ge0.926Sn0.074; In0.10Ga0.90As; Sn incorporation; TEM; XRD; composition-dependent absorption-edge shift; high Sn-percentage GeSn alloys; high-quality material; lattice-matched InGaAs; low-temperature MBE growth; wavelength absorption-edge shifts; Absorption; Gallium arsenide; Optical variables measurement; Photonic band gap; Tin; GeSn; germanium; silicon photonics; tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643330
Filename :
5643330
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3202463
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