Title :
High quality epitaxial Ge1−xSnx alloy films on Si with a Ge buffer by molecular beam epitaxy with combined sources
Author :
Wang, W. ; Su, S.J. ; Zheng, J. ; Zhang, G.Z. ; Zuo, Y.H. ; Cheng, B.W. ; Wang, Q.M.
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
Epitaxial Ge1-xSnx alloys were grown on Si(100) by MBE at low temperature with a Ge buffer layer. The Ge buffer was grown in the same system by two step method using GeH4 as gas source.
Keywords :
buffer layers; germanium alloys; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; tin alloys; Ge1-xSnx-Ge; Ge1-xSnx-Si; GeH<;;sub>4<;;/sub> gas source; MBE; Si; Si(100); buffer layer; epitaxial alloy films; molecular beam epitaxy; two step method; Buffer layers; Epitaxial growth; Rough surfaces; Silicon; Surface roughness; Tin;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643331
