• DocumentCode
    3202499
  • Title

    Compact solid state high repetition rate variable amplitude pulse generator

  • Author

    Pendleton, Scott J. ; Singleton, Daniel ; Kuthi, Andras ; Gundersen, Martin A.

  • Author_Institution
    Seaver Sci. Center, Univ. of Southern California, Los Angeles, CA, USA
  • fYear
    2009
  • fDate
    June 28 2009-July 2 2009
  • Firstpage
    922
  • Lastpage
    925
  • Abstract
    Presented is a solid state high repetition-rate pulse generator with adjustable output amplitude, together with a resonant LC charger. This pulse generator was designed for transient plasma production for ignition and other aerospace plasma applications. The design of the pulse-forming network makes use of commercially available insulated gate bipolar transistors (IGBT) switching a capacitor bank into a METGLAS transformer together with a Fitch voltage doubling circuit. The capacitor bank is charged to 1 kV by a resonant LC charger, also switched by a commercial IGBT. The output of the pulse generator is controlled by the gate voltage of the IGBTs. Pulses with a width of 40 ns can be generated with repetition rates up to 10 kHz. The amplitude can be controlled from 9 kV to 38 kV into a 500 ¿ load.
  • Keywords
    capacitor storage; insulated gate bipolar transistors; plasma applications; power semiconductor switches; pulse generators; pulsed power supplies; pulsed power switches; Fitch voltage doubling circuit; IGBT switching; METGLAS transformer; capacitor bank; compact solid state high repetition rate; gate voltage; insulated gate bipolar transistors; pulse generator; resistance 500 ohm; resonant LC charger; time 40 ns; variable amplitude pulse generator; voltage 9 kV to 38 kV; Ignition; Insulated gate bipolar transistors; Plasma applications; Production; Pulse circuits; Pulse generation; Pulse transformers; Resonance; Solid state circuits; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 2009. PPC '09. IEEE
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-4064-1
  • Electronic_ISBN
    978-1-4244-4065-8
  • Type

    conf

  • DOI
    10.1109/PPC.2009.5386229
  • Filename
    5386229