• DocumentCode
    3202509
  • Title

    Silicon-based light emission in ultraviolet

  • Author

    Sun, J.M. ; Prucnal, S. ; Mücklich, A. ; Skorupa, W. ; Helm, M.

  • Author_Institution
    Sch. of Phys., Nankai Univ., Tianjin, China
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    338
  • Lastpage
    340
  • Abstract
    Efficient UV electroluminescence from Gd-doped SiO2 gate oxide was reported with quantum efficiency larger than 5%. The efficiency and stability was improved by flash lamp annealing, co-doping with F- ions and K+ ions.
  • Keywords
    doping; electroluminescence; gadolinium; incoherent light annealing; light emitting diodes; quantum optics; silicon compounds; Si; SiO2:Gd; codoping; flash lamp annealing; gate oxide; quantum efficiency; silicon-based light emission; ultraviolet electroluminescence; Furnaces; Logic gates; Rapid thermal annealing; Silicon; Temperature measurement; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643332
  • Filename
    5643332
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202509