DocumentCode :
3202509
Title :
Silicon-based light emission in ultraviolet
Author :
Sun, J.M. ; Prucnal, S. ; Mücklich, A. ; Skorupa, W. ; Helm, M.
Author_Institution :
Sch. of Phys., Nankai Univ., Tianjin, China
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
338
Lastpage :
340
Abstract :
Efficient UV electroluminescence from Gd-doped SiO2 gate oxide was reported with quantum efficiency larger than 5%. The efficiency and stability was improved by flash lamp annealing, co-doping with F- ions and K+ ions.
Keywords :
doping; electroluminescence; gadolinium; incoherent light annealing; light emitting diodes; quantum optics; silicon compounds; Si; SiO2:Gd; codoping; flash lamp annealing; gate oxide; quantum efficiency; silicon-based light emission; ultraviolet electroluminescence; Furnaces; Logic gates; Rapid thermal annealing; Silicon; Temperature measurement; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643332
Filename :
5643332
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3202509
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