Title :
Full Field Stress Measurements in Thin Silicon Sheet
Author :
Li, F. ; Garcia, V. ; Danyluk, S.
Author_Institution :
Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
A full field near infrared polariscope has been designed and built for determination of in-plane residual stresses in thin multicrystalline silicon wafers. The technical issues that have been addressed are: wafer size (greater than 4 in times 4 in), wafer thickness (down to 100 mum), crystalline anisotropy, stress calibration and optical inaccuracies. Using this system, the in-plane residual stresses in thin edge-defined growth (EFG), cast and string ribbon wafers are compared
Keywords :
elemental semiconductors; internal stresses; polarimetry; semiconductor thin films; silicon; stress measurement; Si; crystalline anisotropy; full field near infrared polariscope; full field stress measurements; in-plane residual stresses; stress calibration; string ribbon wafers; thin edge-defined growth; thin multicrystalline silicon wafers; thin silicon sheet; Birefringence; Image edge detection; Lenses; Optical filters; Optical polarization; Optical retarders; Optical sensors; Residual stresses; Silicon; Stress measurement;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279425
