Title :
Electrically pumped random lasing from ZnO materials
Author :
Ma, Xiangyang ; Chen, Peiliang ; Tian, Ye ; Li, Dongshen ; Yang, Deren
Author_Institution :
State Key Lab. of Silicon Mater., Zhejiang Univ., Hangzhou, China
Abstract :
In this presentation summary, the realization of electrically pumped random lasing from ZnO materials by means of metal-insulator-semiconductor structure is introduced. Moreover, the mechanism we have proposed for the electrically pumped random lasing is elucidated.
Keywords :
II-VI semiconductors; MIS structures; electron beam pumping; semiconductor lasers; wide band gap semiconductors; zinc compounds; ZnO; electrically pumped random lasing; metal-insulator-semiconductor structure; zinc oxide materials; Films; Optical scattering; Pump lasers; Stimulated emission; Substrates; Zinc oxide;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643335
