Title :
High bandwidth and low noise optimized transimpedance amplifier in 0.8 μm CMOS technology
Author :
Bouzerara, L. ; Guermaz, M.B. ; Escid, H. ; Belaroussi, M.T.
Author_Institution :
Microelectron. Lab., Centre de Developpement des Technol. Avancees, Algiers, Algeria
Abstract :
This paper describes and analyzes a low noise and high bandwidth transimpedance amplifier featuring a large dynamic range. The designed amplifier is configured on three identical stages that use an active load compensated by an active resistor to improve the stability performance of the amplifier. This topology displays a transimpedance gain of 150kΩ, which is necessary to obtain a high sensitivity. This structure operates at 5V power supply voltage, exhibits a gain bandwidth product of 18THzΩ and a low noise level of about 0,94pA/√Hz. This transimpedance amplifier can achieve a transmission speed of 240Mb/s for a photocurrent of 0.5μA. A transmission speed of 622 Mb/s can be achieved by using a connection with optical fiber containing four channels and this for a photocurrent of 9,5μA. The predicted performances are verified by simulations using PSPICE tool with 0.8 μm CMOS AMS parameters.
Keywords :
CMOS integrated circuits; feedback; integrated circuit noise; radiofrequency amplifiers; 0.5 muA; 0.8 μm CMOS AMS parameters; 0.8 μm CMOS technology; 0.8 micron; 150 kohm; 240 Mbit/s; 5 V; 622 Mbit/s; 9.5 muA; PSPICE tool; active load; active resistor; connection; designed amplifier; high bandwidth; high sensitivity; large dynamic range; low noise optimized transimpedance amplifier; stability performance; transimpedance gain; transmission speed; Bandwidth; CMOS technology; Displays; Dynamic range; Low-noise amplifiers; Optical amplifiers; Photoconductivity; Resistors; Stability; Topology;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314886
