DocumentCode :
3202647
Title :
Highly oriented ErxY2−xSiO5 crystalline thin films fabricated by pulsed laser deposition
Author :
Isshiki, H. ; Tanaka, Y. ; Iwatani, K. ; Nakajima, T. ; Kimura, T.
Author_Institution :
Grad. Sch. of Inf. & Eng., Univ. of Electro-Commun. (UEC), Tokyo, Japan
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
311
Lastpage :
313
Abstract :
We propose layer-by-layer deposition approach to fabricate ErxY2-xSiO5 crystalline thin films. Highly oriented ErxY2-xSiO5 thin films with high crystallinity have been obtained by rapid thermal annealing (RTA) crystallization following pulsed-laser deposition (PLD).
Keywords :
crystallisation; erbium compounds; pulsed laser deposition; rapid thermal annealing; thin films; yttrium compounds; ErYSiO5; crystalline thin films; crystallization; layer-by-layer deposition approach; pulsed laser deposition; pulsed-laser deposition; rapid thermal annealing; Annealing; Crystallization; Erbium; Grain size; Silicon; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643342
Filename :
5643342
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3202647
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