Title :
1.1 to 1.6 µm silicon light emitting diodes and optical gain
Author :
Homewood, K.P. ; Lourenço, M.A. ; Gwilliam, R.M.
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
Abstract :
We report silicon LEDs showing light emission from 1.1 to 1.6 μm and demonstrate optical gain by incorporating optically active impurities. Nano-engineering enables room temperature operation. As one exemplar, we show that erbium, with local strain engineering provides useful optical emission and gain at 1.5 μm.
Keywords :
elemental semiconductors; impurities; integrated optics; light emitting diodes; nanotechnology; silicon; Si; light emission; light emitting diodes; local strain engineering; nano-engineering; optical gain; optically active impurities; room temperature operation; silicon LED; temperature 293 K to 298 K; wavelength 1.1 mum to 1.6 mum; Erbium; Light emitting diodes; Optical amplifiers; Optical mixing; Optical pumping; Silicon; Stimulated emission;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643347
