DocumentCode :
3202827
Title :
Influence of electronic nonlinear process in silicon Raman wavelength converter
Author :
Huang, Ying ; Tang, Ming ; Shum, Ping ; Lin, Chinlon
Author_Institution :
Network Technol. Res. Centre, Nanyang Technol. Univ., Singapore, Singapore
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
284
Lastpage :
286
Abstract :
Electronic nonlinear processes such as SPM, XPM and FWM cause dynamic phase shifting and enhance wavelength conversion efficiency in silicon Raman wavelength converter. Waveguide miniaturization to 4cm yields optimized conversion efficiency of -9.1dB.
Keywords :
Raman lasers; elemental semiconductors; multiwave mixing; optical modulation; optical waveguides; optical wavelength conversion; semiconductor lasers; silicon; FWM; SPM; XPM; cross-phase modulation; dynamic phase shifting; electronic nonlinear process; four wave-mixing; self-phase modulation; silicon Raman wavelength converter; waveguide miniaturization; Absorption; Modulation; Optical waveguides; Optical wavelength conversion; Raman scattering; Silicon; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643353
Filename :
5643353
Link To Document :
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