Title :
A fully integrated 0.35 μm CMOS MMIC amplifier for short range 433 MHz ISM band transceiver applications
Author :
Baureis, P. ; Hein, H. ; Peter, M. ; Oehler, F.
Author_Institution :
Univ. of Appl. Sci. Wurzburg, Germany
Abstract :
A two-stage amplifier is implemented by utilizing Austria Micro System (AMS) 0.35 μm CMOS technology with double poly and triple metal layers. The highly linear amplifier consumes 20 mA from a 1.8 V power supply and achieves a power gain of 26 dB with an OIP3 of 14.5 dBm. The fully integrated compact design is realized on only 2 mm2 chip area including bias circuitry and power-down mode.
Keywords :
CMOS integrated circuits; MMIC power amplifiers; transceivers; 0.35 micron; 1.8 V; 1.8 V power supply; 20 mA; 26 dB; 433 MHz; bias circuitry; double poly layers; fully integrated 0.35 μm CMOS MMIC amplifier; fully integrated compact design; highly linear amplifier; power gain; power-down mode; short range 433 MHz ISM band transceiver applications; triple metal layers; CMOS technology; Fingers; Gain; High power amplifiers; Impedance matching; Integrated circuit technology; MMICs; Radiofrequency amplifiers; Transceivers; VHF circuits;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314896
