DocumentCode :
3202923
Title :
A 5-GHz, variable gain, SiGe low noise amplifier
Author :
Plessas, F. ; Kalivas, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Patras Univ., Rion, Greece
Volume :
2
fYear :
2004
fDate :
16-19 May 2004
Firstpage :
609
Abstract :
A bipolar low noise amplifier (LNA) is described in this work. The IC contains the LNA core, an externally programmed bias network, a voltage divider, an LC tank and inductors to set the input impedance. The externally programmed bias network allows the user to select the bias current in an adaptive manner, depending upon the requirements of the individual system. (Low NF, high gain, low consumption etc). The chip can be powered down by sending an appropriate bit stream to the bias network. The tuned amplifier using a parallel LC network provides selective amplification and lower power consumption. The produced gain is 15 dB while the NF is 2.1 dB for moderate power consumption. The IIP3 is -7 dB and the P1dB is -17 dB. The power consumption from a single 5-V supply is 3.4 mA for the low gain mode and 13 mA for the high gain mode.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; radiofrequency amplifiers; semiconductor device noise; wireless LAN; 13 mA; 15 dB; 3.4 mA; 5 GHz; 5 V; 5-GHz variable gain amplifier; LC tank; SiGe; SiGe low noise amplifier; adaptive manner; bias network; bipolar low noise amplifier; externally programmed bias network; input impedance; lower power consumption; selective amplification; tuned amplifier; voltage divider; Energy consumption; Gain; Germanium silicon alloys; Impedance; Inductors; Integrated circuit noise; Low-noise amplifiers; Noise measurement; Silicon germanium; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
Type :
conf
DOI :
10.1109/ICMEL.2004.1314901
Filename :
1314901
Link To Document :
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