DocumentCode :
3203007
Title :
New compact power cells for Ku band applications
Author :
Dechansiaud, A. ; Sommet, R. ; Reveyrand, T. ; Quere, R. ; Chang, C. ; Bouw, D. ; Camiade, M. ; Deborgies, F.
Author_Institution :
CNRS, XLIM, Brive la Gaillarde, France
fYear :
2011
fDate :
18-19 April 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper reports on the design of new power cells based on GaAs PHEMT transistors with 0.25μm gate length in MMIC technology. The design starts from a fishbone power cell initially designed by United Monolithic Semiconductors (UMS). This one allows us to validate the elementary transistor model. This model is used for other power cells design as cascode cell.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; power amplifiers; GaAs; Ku band application; MMIC technology; PHEMT transistor; cascode cell; compact power cell; elementary transistor model; fishbone power cell; size 0.25 mum; Fingers; Frequency measurement; Gain; Logic gates; PHEMTs; Topology; Ku-band; MMIC; PHEMT; cascode cell; compact; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on
Conference_Location :
Vienna
Print_ISBN :
978-1-4577-0650-9
Type :
conf
DOI :
10.1109/INMMIC.2011.5773317
Filename :
5773317
Link To Document :
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