Title :
Dielectric breakdown characteristics and interface trapping of hafnium oxide films
Author :
Zhan, N. ; Poon, M.C. ; Wong, Hei ; Ng, K.L. ; Kok, C.W. ; Filip, V.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal annealing are investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown are also observed. Results suggest that that the soft and hard breakdowns should have different precursor defects. A two-layer model of is proposed to explain these observations.
Keywords :
MOSFET; annealing; dielectric thin films; electric breakdown; hafnium compounds; interface states; semiconductor device breakdown; semiconductor device models; semiconductor-insulator boundaries; sputtered coatings; HfO2; area effects; dielectric breakdown characteristics; direct sputtering; hafnium gate oxide; hard breakdown; interface trapping; rapid thermal annealing; soft breakdowns; stress-voltage effects; two-layer model; CMOS technology; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric materials; Electric breakdown; Electron traps; Hafnium oxide; Rapid thermal annealing; Sputtering; Voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314907
