Title :
An improved 2D-FDTD method for TWFET bandwidth characterization
Author :
Angiolini, C. ; D´Inzeo, G. ; Rota, Paolo
Author_Institution :
Dept. of Electron. Eng., Rome Univ., Italy
Abstract :
A new 2D-FDTD method has been proposed to analyze the dispersion diagram of planar circuits. Traveling wave field effect transistor (TWFET) is a solid state device designed to amplify signals over a wide bandwidth. An analysis of the passive behavior of this device has been performed using mode-matching technique and assuming that the passive structure performances are affected only by the width of the T bar of the gate electrode. To verify such hypothesis and to determine the cut-off frequency of the higher order modes that limits its bandwidth, we have simplified the 2D-FDTD method with a particular normalization, that permits the analysis of the case /spl beta/=0. The proposed approach was tested calculating the dispersion for some known structures and it has been used in the TWFET characterization.<>
Keywords :
Schottky gate field effect transistors; dispersion (wave); finite difference time-domain analysis; microwave field effect transistors; mode matching; 2D FDTD method; T-bar gate electrode; TWFET bandwidth characterization; cutoff frequency; dispersion diagram; field effect transistor; higher order modes; mode-matching technique; solid state device; traveling wave FET; Bandwidth; Dispersion; Electrodes; Electromagnetic fields; FETs; Frequency; Performance analysis; Radio access networks; Solid state circuits; Testing;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405989
