DocumentCode
3203101
Title
Comparison of ultra-thin gate oxide degradation in P and N-MOSFETs
Author
Petit, C. ; Meinertzhagen, A. ; Zander, D. ; Simonetti, O. ; Fadlallah, M. ; Maurel, T.
Author_Institution
L.A.M., Univ. de Reims, France
Volume
2
fYear
2004
fDate
16-19 May 2004
Firstpage
641
Abstract
NMOSFETs and PMOSFETs gate reliability under constant voltage stresses are compared. Gate current variation, in depiction regime, has been used to monitor the oxide reliability. It has been shown that, at low voltages, negative stresses are more degrading that positive ones for both P and N-MOSFET.
Keywords
MOSFET; dielectric thin films; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; Gate current variation; N-MOSFETs; P-MOSFETs; constant voltage stresses; depletion regime; gate reliability; low voltages; negative stresses; ultra-thin gate oxide degradation; Breakdown voltage; Current measurement; Degradation; Electron traps; Leakage current; Low voltage; MOSFET circuits; Monitoring; Stress; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314910
Filename
1314910
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