Title :
Fabrication of μc-3C-SiC/c-Si Heterojunction Solar Cell by Hot Wire CVD System
Author :
Banerjee, Chandan ; Haga, K. ; Miyajima, S. ; Yamada, A. ; Konagai, M.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
Abstract :
N-type microcrystalline 3C-SiC:H films are deposited by hot wire chemical vapor deposition (HWCVD) at a low substrate temperature (~300degC). Heterojunction silicon based photovoltaic devices are fabricated by depositing wide band gap n-type muc-3C-SiC thin films on p-type Si wafer, whose thickness and resistivity are 200 mum and 1-10 Omega-cm respectively. The silicon wafers were textured by alkaline etchent prior to the device fabrication. The photovoltaic parameters of a typical device are found to be Voc=560 mV, Jsc=35.0 mA/cm2, F.F.=0.724, eta=14.20%. Numerical analysis has been performed by using AFORS-HET, one dimensional device simulator to find out the probable cause of the change in device parameters before and after ageing of the filament
Keywords :
ageing; chemical vapour deposition; elemental semiconductors; photovoltaic effects; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; silicon; silicon compounds; solar cells; wide band gap semiconductors; 1 to 10 ohmcm; 100 micron; 1D device simulator; 300 C; AFORS-HET; HWCVD; Si; SiC-Si; ageing; alkaline etchent; heterojunction solar cell; hot wire chemical vapor deposition; n-type microcrystalline films; numerical analysis; photovoltaic devices; semiconductor device fabrication; silicon heterojunction; silicon wafers; wide band gap n-type thin films; Chemical vapor deposition; Fabrication; Heterojunctions; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Temperature; Wideband; Wire;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0016-3
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279677
