DocumentCode :
3203162
Title :
A new GaN HEMT nonlinear model for evaluation and design of 1–2 watt power amplifiers
Author :
Marcoux, Nick L. ; Fisher, Christopher J. ; White, Doug ; Lachapelle, John ; Palacios, Tomas ; Saadat, Omair ; Sonkusale, Sameer
Author_Institution :
Charles Stark Draper Lab., Cambridge, MA, USA
fYear :
2012
fDate :
5-8 Aug. 2012
Firstpage :
53
Lastpage :
56
Abstract :
A large-signal model for GaN HEMT devices is presented for use in medium power (1-2 W), S-band PA applications. The emphasis of the model is on quick extraction from standard measurements to facilitate research in this new operating regime for GaN HEMT devices. The entire model is extracted using small-signal S-parameter measurements under a small variety of bias conditions and DC IV characteristics without the need to sacrifice devices in the process. The validity of the model is demonstrated by the design and fabrication of both a class AB PA (achieving P1dB = 30.7 dBm and PAE = 64%) and class E PA (achieving max PAE = 64.4% at P0= 30.1 dBm) based on the model described.
Keywords :
III-V semiconductors; S-parameters; gallium compounds; high electron mobility transistors; power amplifiers; semiconductor device models; wide band gap semiconductors; DC IV characteristics; GaN; GaN HEMT device; GaN HEMT nonlinear model; S-band PA application; bias condition; class AB PA; class E PA; large-signal model; power 1 W to 2 W; power amplifier; small-signal S-parameter measurement; Capacitance; Fitting; Gallium nitride; HEMTs; Integrated circuit modeling; Microwave circuits; Solid modeling; Class AB; Class E; GaN HEMT; RF/microwave; nonlinear model; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
ISSN :
1548-3746
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2012.6291955
Filename :
6291955
Link To Document :
بازگشت