Dose rate dependence of RADFET irradiation and post-irradiation responses

Several RADFET biasing configurations have been compared in terms of radiation sensitivity, dose rate dependence and fading. Positive gate bias increases sensitivity, however the drawback is that the fading is also increased and dose rate dependence is observed. Samples irradiated with zero and negative gate bias have lower sensitivity, but don´t exhibit significant fading and dose rate dependence. The mechanisms underlying the observed effects have been analysed.