Design and modeling method of package for power GaN HEMTs to limit the input matching sensitivity

Author

Cheron, J. ; Campovecchio, M. ; Barataud, D. ; Reveyrand, T. ; Mons, S. ; Stanislawiak, M. ; Eudeline, P. ; Floriot, D. ; Demenitroux, W.

Author_Institution

XLIM, Univ. de Limoges, Limoges, France

fYear

2011

fDate

18-19 April 2011

Firstpage

1

Lastpage

4

Abstract

This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and by having a very good information about input return loss contours. Moreover, this specific packaged transistor presents input impedance close to 50Ω over [3.0-3.8]GHz.

Keywords

III-V semiconductors; gallium compounds; microwave transistors; power HEMT; wide band gap semiconductors; GaN; design; frequency 3.0 GHz to 3.8 GHz; impedance dispersion; input matching sensitivity; lumped elements; packaged transistor modeling; power GaN HEMT; resistance 50 ohm; Dispersion; Impedance; Integrated circuit modeling; Load modeling; Loss measurement; Transistors; Wires; GaN HEMT; Packaged transistor modeling; load-pull measurements; power amplifiers; pre-matching;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on

Conference_Location

Vienna

Print_ISBN

978-1-4577-0650-9

Type

conf

DOI

10.1109/INMMIC.2011.5773327

Filename

5773327