DocumentCode :
3203212
Title :
The study on strain-induced second-harmonic generation in Si(111) surface and native SiO2/Si(111) interface
Author :
Zhao, Ji-Hong ; Su, Wen ; Chen, Qi-Dai ; Jiang, Ying ; Chen, Zhan-Guo ; Jia, Gang ; Sun, Hong-Bo
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
231
Lastpage :
233
Abstract :
The mechanism of strain-induced second-harmonic generation (SISHG) has been studied and by this means the intrinsic strain build-in native Si/SiO2 interface has been determined as a tensile with a magnitude of 3.07 × 10-4.
Keywords :
elemental semiconductors; optical harmonic generation; silicon; silicon compounds; Si(111) surface; SiO2-Si; build-in native interface; intrinsic strain; second harmonic generation; Force; Frequency conversion; Lattices; Nonlinear optics; Silicon; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643371
Filename :
5643371
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3203212
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