• DocumentCode
    3203239
  • Title

    Si ring optical modulator with multi-cascade p/n junctions

  • Author

    Amemiya, Yoshiteru ; Ding, Hao ; Fukuyama, Masataka ; Yokoyama, Shin

  • Author_Institution
    Res. Inst. for Nanodevice & Bio Syst., Hiroshima Univ., Hiroshima, Japan
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    225
  • Lastpage
    227
  • Abstract
    Si ring resonators with multi-cascade p/n junctions have been proposed and its performance is simulated. The modulation takes a maximum at the carrier concentration of ~1×1018 cm-3 when the propagation loss is 2 dB/cm.
  • Keywords
    carrier density; electro-optical modulation; electron beam lithography; elemental semiconductors; integrated optics; ion implantation; light propagation; optical fabrication; optical interconnections; optical losses; optical resonators; optical waveguides; p-n junctions; silicon; sputter etching; Si; carrier concentration; electron-beam lithography; ion implantation; multicascade p-n junctions; optical fabrication; optical ring modulator; propagation loss; reactive ion etching; waveguide loss; Optical modulation; Optical refraction; Optical ring resonators; Optical variables control; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643373
  • Filename
    5643373