DocumentCode :
3203239
Title :
Si ring optical modulator with multi-cascade p/n junctions
Author :
Amemiya, Yoshiteru ; Ding, Hao ; Fukuyama, Masataka ; Yokoyama, Shin
Author_Institution :
Res. Inst. for Nanodevice & Bio Syst., Hiroshima Univ., Hiroshima, Japan
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
225
Lastpage :
227
Abstract :
Si ring resonators with multi-cascade p/n junctions have been proposed and its performance is simulated. The modulation takes a maximum at the carrier concentration of ~1×1018 cm-3 when the propagation loss is 2 dB/cm.
Keywords :
carrier density; electro-optical modulation; electron beam lithography; elemental semiconductors; integrated optics; ion implantation; light propagation; optical fabrication; optical interconnections; optical losses; optical resonators; optical waveguides; p-n junctions; silicon; sputter etching; Si; carrier concentration; electron-beam lithography; ion implantation; multicascade p-n junctions; optical fabrication; optical ring modulator; propagation loss; reactive ion etching; waveguide loss; Optical modulation; Optical refraction; Optical ring resonators; Optical variables control; Optical waveguides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643373
Filename :
5643373
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3203239
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