DocumentCode
3203239
Title
Si ring optical modulator with multi-cascade p/n junctions
Author
Amemiya, Yoshiteru ; Ding, Hao ; Fukuyama, Masataka ; Yokoyama, Shin
Author_Institution
Res. Inst. for Nanodevice & Bio Syst., Hiroshima Univ., Hiroshima, Japan
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
225
Lastpage
227
Abstract
Si ring resonators with multi-cascade p/n junctions have been proposed and its performance is simulated. The modulation takes a maximum at the carrier concentration of ~1×1018 cm-3 when the propagation loss is 2 dB/cm.
Keywords
carrier density; electro-optical modulation; electron beam lithography; elemental semiconductors; integrated optics; ion implantation; light propagation; optical fabrication; optical interconnections; optical losses; optical resonators; optical waveguides; p-n junctions; silicon; sputter etching; Si; carrier concentration; electron-beam lithography; ion implantation; multicascade p-n junctions; optical fabrication; optical ring modulator; propagation loss; reactive ion etching; waveguide loss; Optical modulation; Optical refraction; Optical ring resonators; Optical variables control; Optical waveguides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643373
Filename
5643373
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