DocumentCode
3203259
Title
Local avalanche breakdowns in semiconductor GaAsP diodes
Author
Koktavy, P. ; Sikula, J. ; Stourac, L.
Author_Institution
Dept. of Phys., Brno Univ. of Technol., Czech Republic
Volume
2
fYear
2004
fDate
16-19 May 2004
Firstpage
667
Abstract
Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.
Keywords
III-V semiconductors; avalanche breakdown; gallium arsenide; gallium compounds; impact ionisation; semiconductor diodes; GaAsP; PN junction inhomogeneity; crystal lattice imperfections; local avalanche breakdowns; microplasma regions; semiconductor GaAsP diodes; Avalanche breakdown; Breakdown voltage; Charge carrier processes; Charge carriers; Equations; Impact ionization; Lattices; Semiconductor device breakdown; Semiconductor device noise; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314918
Filename
1314918
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