• DocumentCode
    3203351
  • Title

    Constant current stress characteristics of RF-sputtered Ta2O5 films on silicon

  • Author

    Novkovski, N. ; Atanassova, E.

  • Author_Institution
    Fac. of Natural Sci. & Math., Inst. of Phys., Skopje, Macedonia
  • Volume
    2
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    683
  • Abstract
    In contrast to the case of silicon dioxide films, evolution of the gate voltage during constant current stress for Ta2O5 films grown on silicon exhibits an additional decreasing region. This decrease can be explained by the thickness lowering of the thin silicon dioxide layer adjacent do the silicon substrate, as concluded from the increase of the capacity in accumulation.
  • Keywords
    dielectric thin films; elemental semiconductors; insulating thin films; semiconductor-insulator boundaries; silicon; sputtered coatings; tantalum compounds; RF-sputtered Ta2O5 films; Si substrate; Ta2O5-Si; accumulation; capacity; constant current stress characteristics; gate voltage; Annealing; Current density; MOS capacitors; Plasma temperature; Radio frequency; Semiconductor films; Silicon compounds; Stress; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314922
  • Filename
    1314922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3203351