Title :
A wideband MMIC oscillator in S-band with 2 switched GaAs HBT VCOs for spatial applications
Author :
Chamaa, N. ; Prigent, M. ; Nallatamby, J.-C. ; Langrez, D. ; Gribaldo, S.
Author_Institution :
C2S2 dept XLIM, Univ. of Limoges, Brive, France
Abstract :
In this paper, we present the design of a MMIC circuit, which contains two switched VCOs based on the Clapp topology using a UMS GaInP/GaAs HBT technology. This achieves more than 30% of tuning range around 3.2 GHz, a phase noise of -95 dBc/Hz at 100 KHz offset frequency from the carrier and a power consumption of 150 mW. A DC switch based on HBT was used in order to switch between the 2 VCOs.
Keywords :
III-V semiconductors; MMIC oscillators; gallium arsenide; heterojunction bipolar transistors; voltage-controlled oscillators; Clapp topology; DC switch; GaAs; GaAs HBT VCO; MMIC circuit; S-band; UMS GaInP/GaAs HBT technology; frequency 100 kHz; power 150 mW; spatial application; tuning range; two switched VCO; wideband MMIC oscillator; Heterojunction bipolar transistors; Integrated circuit modeling; MMICs; Noise; Voltage-controlled oscillators; GaInP/GaAs HBT; MMIC VCO; low phase noie; spatial; switch; wide tuning range;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on
Conference_Location :
Vienna
Print_ISBN :
978-1-4577-0650-9
DOI :
10.1109/INMMIC.2011.5773338
