Title :
Development of flexible fiber-type poly-Si solar cell
Author :
Kuraseko, Hiroshi ; Nakamura, Toshihiro ; Toda, Sadayuki ; Koaizawa, Hisashi ; Jia, Haijun ; Kondo, Michio
Author_Institution :
Production Technol. Dev. Center, Furukawa Electr. Co. Ltd., Chiba
Abstract :
In order to obtain low-cost, high-performance and flexible silicon solar cell, a novel poly-Si solar cell using glass fiber substrate has been developed. Two ways for preparing poly-Si film on glass fiber for very high deposition rate were studied; one is atmospheric thermal CVD and the other is microwave PECVD. The film prepared by atmospheric thermal CVD showed good crystallinity and high hole mobility of 200cm 2/Vs at a carrier concentration of 6e15cm-3, despite its high deposition rate. The solar cell was examined on SiO2 substrate, and cell efficiency by atmospheric thermal CVD was 1.35%. Novel microwave PECVD system specialized for glass fiber substrate was also developed, and poly-Si film could be deposited on the glass fiber substrate at a deposition rate of 1 mum/s
Keywords :
elemental semiconductors; hole mobility; plasma CVD; semiconductor thin films; silicon; solar cells; 1.35 percent; Si; SiO2; atmospheric thermal CVD; carrier concentration; crystallinity; flexible fiber-type poly-silicon solar cell; glass fiber substrate; hole mobility; microwave PECVD; Argon; Crystallization; Electrodes; Furnaces; Glass; Materials science and technology; Photovoltaic cells; Silicon; Substrates; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279689
