DocumentCode :
3203383
Title :
A high transconductance efficiency FGMOS OTA for gm-C ladder filters
Author :
Hizon, John Richard E ; Rodriguez-Villegas, Esther
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
fYear :
2012
fDate :
5-8 Aug. 2012
Firstpage :
105
Lastpage :
108
Abstract :
A new low voltage FGMOS OTA is proposed that can achieve high transconductance efficiency and offers flexibility in tuning that is suitable for gm-C ladder filters. OTAs with higher transconductance efficiency contribute to higher filter dynamic range for a given power consumption. Schematic simulations show efficiencies of up to 50 for a minimum DR of 63dB were achieved in an AMS 0.35μm CMOS process with a supply voltage of 1.8V and power consumption of 56μW.
Keywords :
CMOS integrated circuits; ladder filters; low-power electronics; AMS CMOS process; floating gate MOS; gm-C ladder filter; high transconductance efficiency FGMOS OTA; power 56 muW; power consumption; schematic simulation; size 0.35 mum; voltage 1.8 V; CMOS integrated circuits; Dynamic range; Linearity; Noise; Power demand; Transconductance; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
ISSN :
1548-3746
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2012.6291968
Filename :
6291968
Link To Document :
بازگشت