Radioactive resistance of some commercial memory components

Author

Loncar, B. ; Stankovic, S.J. ; Osmokrovic, P.

Author_Institution

Fac. of Technol. & Metall., Belgrade Univ., Serbia

Volume

2

fYear

2004

fDate

16-19 May 2004

Firstpage

705

Abstract

The goal of this paper is to examine and investigate comparative analysis the resistance of some commercial EPROM and EEPROM components under the influence of gamma radiation. Experimental results show that EPROM components have better radioactive reliability than EEPROM components. Also, the EPROM changes are reversible and after erasing process and reprogramming all EPROM components are functional. On the other hand EEPROM changes are irreversible and under the influence of gamma radiation all EEPROM components became permanently nonfunctional. These results are considered relevant for the use of these components in both military industry and space technology. The obtained results are analyzed and explained theoretically.

Keywords

EPROM; gamma-ray effects; interface states; radiation hardening (electronics); EEPROM; EPROM; commercial memory components; gamma radiation; radioactive resistance; EPROM; Electronic components; Gamma rays; Ionizing radiation; Neutrons; Nuclear and plasma sciences; Performance evaluation; Radioactive materials; Space technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314928

Filename

1314928