Radioactive resistance of some commercial memory components

The goal of this paper is to examine and investigate comparative analysis the resistance of some commercial EPROM and EEPROM components under the influence of gamma radiation. Experimental results show that EPROM components have better radioactive reliability than EEPROM components. Also, the EPROM changes are reversible and after erasing process and reprogramming all EPROM components are functional. On the other hand EEPROM changes are irreversible and under the influence of gamma radiation all EEPROM components became permanently nonfunctional. These results are considered relevant for the use of these components in both military industry and space technology. The obtained results are analyzed and explained theoretically.