DocumentCode :
3203494
Title :
Silicon high-speed electro-optic modulator
Author :
Alloatti, L. ; Korn, D. ; Hillerkuss, D. ; Vallaitis, T. ; Li, J. ; Bonk, R. ; Palmer, R. ; Schellinger, T. ; Koos, C. ; Freude, W. ; Leuthold, J. ; Fournier, M. ; Fedeli, J. ; Barklund, A. ; Dinu, R. ; Wieland, J. ; Bogaerts, W. ; Dumon, P. ; Baets, R.
Author_Institution :
Inst. of Photonics & Quantum Electron. (IPQ), Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
195
Lastpage :
197
Abstract :
A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with a nonlinear organic material. A modulation voltage-length product of VπL = 0.21 Vcm can be achieved.
Keywords :
electro-optical modulation; elemental semiconductors; high-speed optical techniques; integrated optics; nonlinear optics; optical materials; optical waveguides; organic compounds; silicon; silicon-on-insulator; Si; bit rate 40 Gbit/s; high-speed electrooptic modulator; modulation voltage-length product; nonlinear organic material; silicon-on-insulator photonics; slotted silicon waveguide; Electrooptical waveguides; Fiber optics; Optical modulation; Phase modulation; Silicon; CMOS; chromophores; electro-optic; high-speed; modulator; second order nonlinearity; silicon; slot; socket;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643383
Filename :
5643383
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3203494
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