Silicon high-speed electro-optic modulator

Author

Alloatti, L. ; Korn, D. ; Hillerkuss, D. ; Vallaitis, T. ; Li, J. ; Bonk, R. ; Palmer, R. ; Schellinger, T. ; Koos, C. ; Freude, W. ; Leuthold, J. ; Fournier, M. ; Fedeli, J. ; Barklund, A. ; Dinu, R. ; Wieland, J. ; Bogaerts, W. ; Dumon, P. ; Baets, R.

Author_Institution

Inst. of Photonics & Quantum Electron. (IPQ), Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany

fYear

2010

fDate

1-3 Sept. 2010

Firstpage

195

Lastpage

197

Abstract

A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with a nonlinear organic material. A modulation voltage-length product of V_πL = 0.21 Vcm can be achieved.

Keywords

electro-optical modulation; elemental semiconductors; high-speed optical techniques; integrated optics; nonlinear optics; optical materials; optical waveguides; organic compounds; silicon; silicon-on-insulator; Si; bit rate 40 Gbit/s; high-speed electrooptic modulator; modulation voltage-length product; nonlinear organic material; silicon-on-insulator photonics; slotted silicon waveguide; Electrooptical waveguides; Fiber optics; Optical modulation; Phase modulation; Silicon; CMOS; chromophores; electro-optic; high-speed; modulator; second order nonlinearity; silicon; slot; socket;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2010 7th IEEE International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-6344-2

Type

conf

DOI

10.1109/GROUP4.2010.5643383

Filename

5643383