Performance and characteristics of silicon avalanche photodetectors in the C5 process

Author

Montierth, Dennis ; Strand, Timothy ; Leatham, James ; Linder, Lloyd ; Baker, R. Jacob

Author_Institution

Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID, USA

fYear

2012

fDate

5-8 Aug. 2012

Firstpage

134

Lastpage

137

Abstract

Avalanche photodetectors (APDs) have been fabricated in ON Semiconductor´s C5 process without any special process or fabrication steps. The electrical and optical characteristics of APDs, with varying active area and guard ring configurations, are reported in this paper. Also reported are the details and considerations that went into laying out the APDs. It was found that substrate current was negligible and nearly independent of the geometrical shape of the substrate tie-downs around the perimeter of the APD structures. The measured APD breakdown is approximately 14 V. The devices show optical gains in excess of 1,000 at photocurrents of 10 μA.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit design; photodetectors; readout electronics; silicon; APD breakdown; APD electrical characteristics; APD optical characteristics; CMOS process; ON semiconductor C5 process; ROIC design; Si; current 10 muA; read out integrated circuits design; silicon APD; silicon avalanche photodetectors; substrate tie-downs; voltage 14 V; Decision support systems; Geometrical optics; Integrated optics; Optical device fabrication; Optical variables measurement; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on

Conference_Location

Boise, ID

ISSN

1548-3746

Print_ISBN

978-1-4673-2526-4

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2012.6291975

Filename

6291975