Title :
Performance and characteristics of silicon avalanche photodetectors in the C5 process
Author :
Montierth, Dennis ; Strand, Timothy ; Leatham, James ; Linder, Lloyd ; Baker, R. Jacob
Author_Institution :
Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID, USA
Abstract :
Avalanche photodetectors (APDs) have been fabricated in ON Semiconductor´s C5 process without any special process or fabrication steps. The electrical and optical characteristics of APDs, with varying active area and guard ring configurations, are reported in this paper. Also reported are the details and considerations that went into laying out the APDs. It was found that substrate current was negligible and nearly independent of the geometrical shape of the substrate tie-downs around the perimeter of the APD structures. The measured APD breakdown is approximately 14 V. The devices show optical gains in excess of 1,000 at photocurrents of 10 μA.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit design; photodetectors; readout electronics; silicon; APD breakdown; APD electrical characteristics; APD optical characteristics; CMOS process; ON semiconductor C5 process; ROIC design; Si; current 10 muA; read out integrated circuits design; silicon APD; silicon avalanche photodetectors; substrate tie-downs; voltage 14 V; Decision support systems; Geometrical optics; Integrated optics; Optical device fabrication; Optical variables measurement; Substrates;
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2012.6291975
