Texturing Mechanism of Si using Hydrogen Radicals

A new way of inverted pyramid or labyrinth V groove texture fabrication on the polished silicon surface by the hot filament method is proposed. The assist of mesh like particle layer deposition, which works as an etching mask against hydrogen radical, enables the fabrication of surface texture. The particles were not deposited as mesh like pattern when the SiO₂/Si substrate was used. In addition, the particle deposition pattern depended on the substrate area size and the distance between the substrate and the filament. The results suggest that the evaporation of silicon hydrides from the silicon surface has an important role to generate the particles and mesh-like particle pattern. The surface texturization of the EFG ribbon wafers and as cut CZ wafers were examined