Title :
Effect of HF Treatment on Hydrogenated Silicon Nitride Anti-reflection Films Quality and Optical Properties
Author :
Jeon, M.S. ; Dhamrin, M. ; Saitoh, T. ; Kamisako, K.
Author_Institution :
Tokyo Univ. of Agric. & Technol.
Abstract :
The effect of diluted hydrofluoric (HF) acid treatment on the refractive index, etch rate and chemical composition of hydrogenated silicon nitride (SiNx:H) films is investigated. The hydrogenated silicon nitride (SiNx:H) films are deposited using the direct plasma enhanced chemical vapor deposition (PECVD) on n +p crystalline silicon solar cells before contact screen-printing process. In order to study the optical properties and chemical composition of formed SiNx:H layers, the reflectance and FT-IR spectra are used. Moreover, the printed contact on the deposited SiNx:H films and its cross section are observed by the scanning electron microscopy (SEM) after firing with different firing durations in quartz tube furnace
Keywords :
Fourier transform spectra; antireflection coatings; infrared spectra; plasma CVD; plasma materials processing; refractive index; scanning electron microscopy; silicon compounds; solar cells; thin films; FTIR spectra; Fourier transform infrared spectra; PECVD; SEM; SiNx:H; chemical composition; crystalline silicon solar cells; diluted hydrofluoric acid treatment; direct plasma enhanced chemical vapor deposition; etch rate; hydrogenated silicon nitride antireflection films; optical properties; quartz tube furnace; reflectance; refractive index; scanning electron microscopy; screen-printing process; Chemicals; Etching; Hafnium; Optical films; Optical refraction; Optical variables control; Refractive index; Scanning electron microscopy; Semiconductor films; Silicon compounds;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279720
