• DocumentCode
    3203598
  • Title

    Stability of a-Si:H solar cells and corresponding intrinsic materials fabricated using hydrogen diluted silane

  • Author

    Lee, Yeeheng ; Jiao, Lihong ; Liu, Hongyue ; Lu, Zhou ; Collins, R. ; Wronski, C.R.

  • Author_Institution
    Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    1165
  • Lastpage
    1168
  • Abstract
    We report on a study in which properties of p(a-SiC:H)/i(a-Si:H)/n(μc-Si) a-Si:H solar cells and their i-materials prepared with hydrogen dilution are investigated and compared with films and cells prepared without hydrogen dilution. The cells and the corresponding intrinsic films were fabricated in a multi-chamber PECVD system with pure silane (SiH4) and silane diluted with hydrogen in the ratio [H2]/[SiH4]=10. The initial performance of both types of cells (~4000 Å thick) fabricated without optical enhancement are quite similar but the diluted cells are significantly more stable. Despite the reported importance of the interface regions in determining their solar cell characteristics, a direct correlation between the degradation of the diluted solar cells and their intrinsic films is observed in this study. Both diluted cells and films reach a steady state of degradation under AM1 illumination within 100 hours. Distinctly different kinetics from the undiluted materials and cells and the ability to reach steady state degradation in less than 100 hours offer a new probe for improving our understanding of the mechanisms limiting cell performance
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; silicon compounds; solar cells; stability; 4000 A; AM1 illumination; SiC:H-Si:H-Si; SiC:H-Si:H-Si:H; SiH4; a-Si:H solar cells stability; hydrogen diluted silane; intrinsic materials; kinetics; multi-chamber PECVD system; p(a-SiC:H)/i(a-Si:H)/n(μc-Si) solar cell; p(a-SiC:H)/i(a-Si:H)/n(a-Si:H) solar cell; pure silane; steady state degradation; Degradation; Fabrication; Hydrogen; Kinetic theory; Lighting; Optical films; PIN photodiodes; Photovoltaic cells; Stability; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564339
  • Filename
    564339