Title :
Chalcogenide-based non-volatile memory technology
Author :
Maimon, Jon ; Spall, Ed ; Quinn, Robert ; Schnur, Steven
Author_Institution :
Ovonyx Inc., Manassas, VA, USA
Abstract :
Chalcogenide is a proven phase change material used in re-writeable CDs and DVDs. This material changes phases, reversibly and quickly, between an amorphous state that is dull in appearance and electrically high in resistance, and a polycrystalline state that is highly reflective and low in resistance. The application of this commercially proven technology to create semiconductor memories is discussed. The successful results of an effort to create a memory cell that would allow for the production of a dense, low power, non-volatile memory is presented
Keywords :
chalcogenide glasses; random-access storage; semiconductor storage; semiconductor technology; GeSbTe; GeSbTe alloy; OUM; Ovonic Unified Memory; chalcogenide; nonvolatile memory; phase change material; polycrystalline state; semiconductor memories; Amorphous materials; Costs; DVD; Electric resistance; Germanium alloys; Nonvolatile memory; Phase change materials; Production; Random access memory; Semiconductor memory;
Conference_Titel :
Aerospace Conference, 2001, IEEE Proceedings.
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-6599-2
DOI :
10.1109/AERO.2001.931188
