DocumentCode :
3203692
Title :
Luminescence of Tm3+ in dislocation engineered silicon substrates
Author :
Lourenço, M.A. ; Wong, L. ; Gwilliam, R.M. ; Homewood, K.P.
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
159
Lastpage :
161
Abstract :
Photoluminescence at 1.2 to1.4 μm is demonstrated in dislocation engineered silicon substrates doped with Tm3+ leading to the development of forward biased light emitting devices operating at a turn-on voltage of only 1 V.
Keywords :
dislocations; elemental semiconductors; light emitting devices; photoluminescence; silicon; thulium; Si:Tm; dislocation engineered silicon substrates; forward biased light emitting devices; photoluminescence; thulium ion; turn-on voltage; voltage 1 V; wavelength 1.2 mum to 1.4 mum; Annealing; Optical device fabrication; Photoluminescence; Silicon; Substrates; Thermal quenching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643395
Filename :
5643395
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3203692
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