DocumentCode :
32037
Title :
A 4.2 mW 50 MS/s 13 bit CMOS SAR ADC With SNR and SFDR Enhancement Techniques
Author :
Miki, Takuji ; Morie, Takashi ; Matsukawa, Kazuo ; Bando, Yoji ; Okumoto, Takeshi ; Obata, Koji ; Sakiyama, Shiro ; Dosho, Shiro
Author_Institution :
Panasonic Corp., Kadoma, Japan
Volume :
50
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
1372
Lastpage :
1381
Abstract :
This paper presents a SAR ADC with 71 dB SNDR and 85 dB SFDR at 50 MS/s while keeping low power consumption of 4.2 mW. To achieve high resolution without large increase of power, several SNR and SFDR enhancement techniques are proposed. Firstly, the ADC repeats comparison of LSB by using redundant DAC to average comparator noise and improve SNR. The technique also corrects settling error adaptively, which extends operation speed to 50 MHz even though extra comparison period is added for averaging. Secondly, simple filtering method for reducing DAC noise is introduced to achieve further improvement of SNR. Finally, new dithering method is proposed to enhance SFDR. Injecting noise-shaped, multi-valued and uniform-distributed dither to input of the ADC, spurs caused by capacitance mismatches of DAC can be suppressed more effectively compared with conventional dithering. These techniques can be realized by simple circuits in addition to a basic SAR ADC configuration and do not need high power consumption. The chip is fabricated in a 90 nm CMOS process and occupies 0.1 mm 2 including all correction logic. The ADC achieved a peak figure of merit (FoM) of 168.7 dB.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; comparators (circuits); digital-analogue conversion; error analysis; filtering theory; power consumption; CMOS SAR ADC; FoM; LSB; SFDR enhancement techniques; SNR enhancement techniques; analogue-digital conversion; average comparator noise; capacitance mismatches; correction logic; extra comparison period; figure of merit; filtering method; high power consumption; low power consumption; noise-shaped injection; power 4.2 mW; redundant DAC noise reduction; settling error adaptively; size 90 nm; uniform-distributed dither method; word length 13 bit; Bandwidth; CMOS integrated circuits; Capacitance; Capacitors; Power demand; Signal to noise ratio; ADC; CMOS; SAR; dithering;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2015.2417803
Filename :
7088661
Link To Document :
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