Photoluminescence from dislocations in silicon induced by irradiation of electron beams

We induced dislocations controllably by using irradiation of electron beam. The dislocations induced by irradiation slipped though whole wafer and well-distributed at its slipping direction {111} 〈100〉 with a density highest to ~1.3×10⁷ cm^-2. And dislocations related luminescence (DRL) peaks from D1 to D4 were observed in the irradiated silicon. This method may lead to the silicon based light emitting device with the compatibility of integrated circuit technology.